SI1013CX - Vishay

SI1013CX MOSFET

www.vishay.com Si1013CX Vishay Siliconix P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.760 at VGS = -4.5 V -20 1.040 at VGS = -2.5 V 1.500 at VGS = -1.8 V ID (A) -0.45 -0.40 -0.32 Qg (TYP.) (nC) 1 SC-89 (3 leads) D 3 1 G Top View 2 S Marking Code: 6 Ordering Information: Si1013CX-T1-GE3 (Lead (Pb)-free and Halogen-free) FEA.

Features

• TrenchFET® power MOSFET
• 100 % Rg tested
• Typical ESD protection: 1000 V (HBM)
• Fast switching speed
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Load / power switch for portable devices
• Drivers: relays, solenoids, displays
• Battery operated systems G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TA = 25 °C TA = 70 °C ID Pulsed Drain Current (t = 300 μs) IDM Continuou.