P-Channel 1.8 V (G-S) MOSFET Si1013R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 1.2 at VGS = - 4.5 V - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) - 350 - 300 - 150 SC-75A or SC-89 G1 S2 Top View 3D SC-75A (SOT-416): Si1013R - Marking Code D SC-89 (SOT-490): Si1013X - Marking Code B Ordering Information: Si1013R-T1-GE3 (SC-.
• Halogen-free According to IEC 61249-2-21
Definition
• High-Side Switching
• Low On-Resistance: 1.2
• Low Threshold: 0.8 V (Typ.)
• Fast Switching Speed: 14 ns
• 1.8 V Operation
• TrenchFET® Power MOSFETs
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1013 |
Silicon Laboratories |
Ultra Low Power ADC | |
2 | SI1013CX |
Vishay |
MOSFET | |
3 | SI1013R |
Vishay Siliconix |
P-Channel MOSFET | |
4 | SI1010 |
Silicon Laboratories |
Ultra Low Power 10-Bit ADC | |
5 | SI1011 |
Silicon Laboratories |
Ultra Low Power ADC | |
6 | SI1012 |
MCC |
N-Channel Transistor | |
7 | SI1012 |
Silicon Laboratories |
Ultra Low Power ADC | |
8 | SI1012CR |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SI1012R |
Vishay Siliconix |
N-Channel MOSFET | |
10 | Si1012X |
Vishay Siliconix |
N-Channel MOSFET | |
11 | SI1014 |
Silicon Laboratories |
Ultra Low Power ADC | |
12 | SI1015 |
Silicon Laboratories |
Ultra Low Power ADC |