SEMiX101GD12E4s - Semikron International

SEMiX101GD12E4s IGBT

SEMiX101GD12E4s SEMiX® 13 Trench IGBT Modules SEMiX101GD12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • .

Features

• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature coefficient
• High short circuit capability
• UL recognized, file no. E63532 Typical Applications
*
• AC inverter drives
• UPS
• Electronic Welding Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFno.