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SEMiX101GD12E4s |
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| Part Number | SEMiX101GD12E4s |
| Manufacturer | Semikron International |
| Description | SEMiX101GD12E4s SEMiX® 13 Trench IGBT Modules SEMiX101GD12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capabili... |
| Features |
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 150 °C Inverse diode IF Tj = 175 °C Tc = 25 °C Tc = 80 °C IFno... |
| Document |
 SEMiX101GD12E4s Data Sheet
PDF 524.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SEMIX101GD126HDS |
Semikron International |
IGBT |
|
| 2 | SEMIX101GD128DS |
Semikron International |
IGBT |
|
| 3 | SEMIX101GD12T4S |
Semikron International |
IGBT |
|
| 4 | SEMiX101GD12Vs |
Semikron International |
IGBT |
|
| 5 | SEMIX101GD066HDS |
Semikron International |
IGBT |
|