SEMIX101GD126HDS - Semikron International

SEMIX101GD126HDS IGBT

SEMiX101GD126HDs SEMiX® 13 Trench IGBT Modules SEMiX101GD126HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • .

Features

• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature coefficient
• High short circuit capability
• UL recognised file no. E63532 Typical Applications
*
• AC inverter drives
• UPS
• Electronic Welding Remarks
• Case temperatur limited to TC=125°C max.
• Not for new design Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 2xICnom VGES tpsc Tj VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp .