SEMiX101GD066HDs SEMiX® 13 Trench IGBT Modules SEMiX101GD066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliab.
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications
*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
• For short circuit: Soft RGoff recommended
• Take care of over-voltage caused by stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES
tpsc
Tj
ICRM = 2xICnom
VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
Tj =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SEMIX101GD126HDS |
Semikron International |
IGBT | |
2 | SEMIX101GD128DS |
Semikron International |
IGBT | |
3 | SEMiX101GD12E4s |
Semikron International |
IGBT | |
4 | SEMIX101GD12T4S |
Semikron International |
IGBT | |
5 | SEMiX101GD12Vs |
Semikron International |
IGBT | |
6 | SEMiX105GD12T4 |
Semikron |
IGBT | |
7 | SEMiX106GD12T4p |
Semikron |
IGBT | |
8 | SEMIX141KT16S |
Semikron International |
Rectifier Thyristor | |
9 | SEMiX151GAL12E4s |
Semikron International |
IGBT | |
10 | SEMIX151GAL12T4S |
Semikron International |
IGBT | |
11 | SEMiX151GAL12Vs |
Semikron International |
IGBT | |
12 | SEMiX151GAR12E4s |
Semikron International |
IGBT |