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SEMIX101GD066HDS |
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| Part Number | SEMIX101GD066HDS |
| Manufacturer | Semikron International |
| Description | SEMiX101GD066HDs SEMiX® 13 Trench IGBT Modules SEMiX101GD066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E6... |
| Features |
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj =... |
| Document |
 SEMIX101GD066HDS Data Sheet
PDF 150.18KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
| 1 | SEMIX101GD126HDS |
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| 3 | SEMiX101GD12E4s |
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| 4 | SEMIX101GD12T4S |
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| 5 | SEMiX101GD12Vs |
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