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The SD1496 is a silicon NPN transistor designed for 860–900 MHz base station applications. Gold metallization and internal impedance matching provide superior reliability and consistent broadband performance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS T STG TJ Collector-Base Voltage Collector-Emitter Voltage Collector-Em.
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• 900 MHz 24 VOLTS POUT = 60 WATTS 50% EFFICIENCY GP = 7.5 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION
DESCRIPTION:
The SD1496 is a silicon NPN transistor designed for 860
–900 MHz base station applications. Gold metallization and internal impedance matching provide superior reliability and consistent broadband performance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VCES VEBO IC PDISS T STG TJ Collector-Base Voltage
Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage
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Device Current Power Dissipation Storage Temperature
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.D w
Par.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1490 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | SD1490 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
|
| 3 | SD1490-1 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
|
| 4 | SD1492 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
|
| 5 | SD1492-2 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
|
| 6 | SD1495 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 7 | SD1495-03 |
Advanced Power Technology |
RF & Microwave Transistors |
|
| 8 | SD1495-3 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 9 | SD1496-03 |
Advanced Power Technology |
RF & Microwave Transistors |
|
| 10 | SD1496-3 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 11 | SD14-100-R |
Eaton |
Low profile metalized shielded drum core power inductors |
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| 12 | SD14-101-R |
Eaton |
Low profile metalized shielded drum core power inductors |
|