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The ASI SD1492 is a Common Emitter Device Designed for Class AB operation in UHF Amplifier Applications in Television Band IV & V Transmitters. PACKAGE STYLE .450 BAL FLG.(A) A .120 x 45° B FULL R FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC 310 W @ TC = 25 °C -65 °C to +200 °C .
INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Internal Matching
MAXIMUM RATINGS
IC VCBO PDISS TJ TSTG θJC
310 W @ TC = 25 °C -65 °C to +200 °C
-65 °C to +150 °C 0.55 °C/W
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO ICES hFE COB POUT GP nC
IC = 100 mA IC = 100 mA IE = 50 mA VCE = 28 V
VCE = 5.0 V VCB = 28 V VCE = 28 V
m o .c U 4 t e e h S a t a .D w w w
E D C M .208 F 4X.060 R .210 I G .050 NOM. H J K L DIM A B MINIMUM
inches / mm
MAXIMUM
inches / mm
.373 / 9.47
.385 / 9.78
25 A
.205 / 5.21
C D E F
.120 / 3.25
.130 / 3.30
.411 / 10.44 .825 / 20.96
.421 / 10.69 .865 / 21.97 ..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1490 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS |
|
| 2 | SD1490 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
|
| 3 | SD1490-1 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
|
| 4 | SD1492-2 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
|
| 5 | SD1495 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 6 | SD1495-03 |
Advanced Power Technology |
RF & Microwave Transistors |
|
| 7 | SD1495-3 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 8 | SD1496 |
Advanced Power Technology |
RF & Microwave Transistors |
|
| 9 | SD1496-03 |
Advanced Power Technology |
RF & Microwave Transistors |
|
| 10 | SD1496-3 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
| 11 | SD14-100-R |
Eaton |
Low profile metalized shielded drum core power inductors |
|
| 12 | SD14-101-R |
Eaton |
Low profile metalized shielded drum core power inductors |
|