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The ASI SD1490-1 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching PACKAGE STYLE .450 BAL FLG.(A) MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC O O 8.0 A 45 V 155 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 1.15 .
INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Internal Matching
PACKAGE STYLE .450 BAL FLG.(A) MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC
O O
8.0 A 45 V 155 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 1.15 C/W
O O O O
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO hFE COB GP Gp IMD3 IC = 200 mA IC = 50 mA IE = 10 mA
TC = 25 C
TEST CONDITIONS (PER SIDE)
VCE = 5.0 V VCB = 28 V
w
w
.D w
O
t a
S a
e h
t e
U 4
.c
m o
1 = Collector 2 = Base 3 = Emitter
MINIMUM TYPICAL MAXIMUM
30 45 3.0 10 100 72 8.0 7.0 9.0 8.0
UNITS
V V V
IC = 3.0 A f = 1.0 MHz IC = 2 X 1.6 A IC = 2 X 250 mA f =.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD1490 |
ST Microelectronics |
RF & MICROWAVE TRANSISTORS |
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| 2 | SD1490 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
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| 3 | SD1492 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
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| 4 | SD1492-2 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor |
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| 5 | SD1495 |
Microsemi Corporation |
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| 6 | SD1495-03 |
Advanced Power Technology |
RF & Microwave Transistors |
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| 7 | SD1495-3 |
Microsemi Corporation |
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| 8 | SD1496 |
Advanced Power Technology |
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| 9 | SD1496-03 |
Advanced Power Technology |
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| 10 | SD1496-3 |
Microsemi Corporation |
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| 11 | SD14-100-R |
Eaton |
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| 12 | SD14-101-R |
Eaton |
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