The ASI SD1490 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC 155 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 1.15 OC/W CHARACTERISTICS SYMBOL BV CEO BV CB.
INCLUDE:
• Gold Metalization
• Emitter Ballasting
• Internal Matching
MAXIMUM RATINGS
IC VCB PDISS TJ T STG θ JC
155 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 1.15 OC/W
CHARACTERISTICS
SYMBOL
BV CEO BV CBO BV EBO hFE COB GP Gp IMD3
IC = 200 mA IC = 50 mA IE = 10 mA
VCE = 5.0 V VCB = 28 V
m o .c U 4 t e e h S a t a .D w w w
8.0 A 45 V
TC = 25 OC
PACKAGE STYLE .450 BAL FLG.(A)
1 = Collector 2 = Base 3 = Emitter
TEST CONDITIONS (PER SIDE)
MINIMUM TYPICAL MAXIMUM
30 45
UNITS
V V V
VCE = 26.5 V VCE = 28 V Pout = 50 W
VCE = 26.5 V Pout = 25 W VISION = -8.0dB SOUND = -10 dB
ADV.
The SD1490 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for hig.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD1490-1 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor | |
2 | SD1492 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor | |
3 | SD1492-2 |
Advanced Semiconductor |
NPN Silicon RF Power Transistor | |
4 | SD1495 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS | |
5 | SD1495-03 |
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RF & Microwave Transistors | |
6 | SD1495-3 |
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RF & MICROWAVE TRANSISTORS | |
7 | SD1496 |
Advanced Power Technology |
RF & Microwave Transistors | |
8 | SD1496-03 |
Advanced Power Technology |
RF & Microwave Transistors | |
9 | SD1496-3 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS | |
10 | SD14-100-R |
Eaton |
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11 | SD14-101-R |
Eaton |
Low profile metalized shielded drum core power inductors | |
12 | SD14-102-R |
Eaton |
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