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1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junction Temperature, Operating and Storage TEST CONDITIONS VGS = 0V, ID = 100µA Absolute .
ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B BENEFITS PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER SYSTEM EFFICIENCY EXCELLENT REVERSE RECOVERY APPLICATIONS HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES BATTERY CHARGERS SOLAR INVERTERS INDUCTION HEATING SD11740 1200V SiC N-Channel Power MOSFET - 1 D G KS S VDS = 1200V ID @ 25°C = 100A RDS(on) = 8.6mΩ ORDERING GUIDE Part Number SD11740 Description 1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max Gate-Source Voltage (dynam.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD11704 |
Solitron Devices |
900V SiC N-Channel Power MOSFET |
|
| 2 | SD11705 |
Solitron Devices |
1200V SiC N-Channel Power MOSFET |
|
| 3 | SD11707 |
Solitron Devices |
1200V SiC N-Channel Power MOSFET |
|
| 4 | SD11710 |
Solitron Devices |
700V SiC N-Channel Power MOSFET |
|
| 5 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
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| 6 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version |
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| 7 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers |
|
| 8 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 9 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 10 | SD1133 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 11 | SD1134 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 12 | SD1135 |
SGS-Thomson |
(SD1xxx) Transistors |
|