SD11707 - Solitron Devices

SD11707 1200V SiC N-Channel Power MOSFET

1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) PARAMETER SYMBOL VALUE Drain to Source Voltage (static) VDSmax 1200V Continuous Drain Current ID 50A 46A Pulsed Drain Current Max. Power Dissipation Gate-to-Source Voltage (dynamic) Gate-to-Source Voltage (static) Operating Junction Temperature Storage Te.

Features

LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES ROBOTICS AND SERVO CONTROLS SD11707 1200V SiC N-Channel Power MOSFET - 1 3-G VDS = 1200V 1-D ID @ 25°C = 50A RDS(on) = 16mΩ 2-S ORDERING GUIDE Part Number SD11707 Description 1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) PARAMETER SYMBOL VALUE Drain to Source Voltage (static) VDSmax 1200V Continuous.