SD11705 - Solitron Devices

SD11705 1200V SiC N-Channel Power MOSFET

1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max VGS, op Gate-Source Voltage (Max.) Gate-Source Voltage lD Continuous Drain Current lD, pulse Pulsed Drain Current PD Maximum Power Dissipation TJ, TSTG Junction Temperature, Operating and Storage TEST CONDITIONS VGS .

Features

LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES ROBOTICS AND SERVO CONTROLS SD11705 1200V SiC N-Channel Power MOSFET - 1 VDS = 1200V 2-D ID @ 25°C = 50A RDS(on) = 32mΩ 1-G 3-S ORDERING GUIDE Part Number SD11705 Description 1200V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VDS, max Drain-Source Voltage VGS, max VGS, op Gate-Source Voltage (Max.) Gate-Sour.