SD11710 - Solitron Devices

SD11710 700V SiC N-Channel Power MOSFET

700V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VALUE VDS Drain-Source Voltage VGS Gate-Source Voltage (dynamic) lD Continuous Drain Current lD, pulse Pulsed Drain Current * PD Maximum Power Dissipation Linear Derating Factor TC = 25°C TC = 100°C 700 23 to -10 140 99 350 455 3.03 * Repetitive ratin.

Features

ID = 50A RDS(ON) = 15mΩ ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW GATE CHARGE FAST SWITCHING SPEED DUE TO LOW INTERNAL GATE RESISTANCE (ESR) STABLE OPERATION AT HIGH JUNCTION TEMPERATURE, TJ(MAX) = 175 °C FAST AND RELIABLE BODY DIODE SUPERIOR AVALANCHE RUGGEDNESS ROHS COMPLIANT SD11710 700V SiC N-Channel Power MOSFET - 1 VDS = 700V 2-D ID @ 25°C = 140A RDS(on) = 15mΩ 1-G 3-S ORDERING GUIDE Part Number SD11710 Description 700V SiC N-Channel Power MOSFET ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL CHARACTERISTIC VA.