This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and.
TAB 7
Order code SCT014HU65G3AG
VDS 650 V
RDS(on) typ. 13.5 mΩ
ID 110 A
Gate (1) Driver source (2)
1 HU3PAK
Drain (TAB)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
• AEC-Q101 qualified
•
Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd.
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