SCT012W90G3AG - STMicroelectronics

SCT012W90G3AG Automotive-grade silicon carbide Power MOSFET

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and .

Features

Order code SCT012W90G3AG VDS 900 V RDS(on) typ. 12 mΩ ID 110 A HiP247 3 2 1 D(2, TAB)
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3) Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The dev.