SCT015W120G3-4AG - STMicroelectronics

SCT015W120G3-4AG Automotive-grade silicon carbide Power MOSFET

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and.

Features

Order code SCT015W120G3-4AG VDS 1200 V RDS(on) typ. 15 mΩ ID 129 A HiP247-4 2 34 1 Drain(1, TAB)
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency Gate(4) Driver source(3) Applications Power source(2) ND1TPS2DS3G4
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovativ.