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SCT014HU65G3AG |
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| Part Number | SCT014HU65G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature... |
| Features |
TAB 7
Order code SCT014HU65G3AG
VDS 650 V
RDS(on) typ. 13.5 mΩ
ID 110 A
Gate (1) Driver source (2)
1 HU3PAK
Drain (TAB)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd... |
| Document |
 SCT014HU65G3AG Data Sheet
PDF 914.49KB |
| Distributor | Stock | Price | Buy |
|---|
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