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SCT012W90G3AG |
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| Part Number | SCT012W90G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature ... |
| Features |
Order code SCT012W90G3AG
VDS 900 V
RDS(on) typ. 12 mΩ
ID 110 A
HiP247
3 2
1
D(2, TAB)
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) G(1) S(3) Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The dev... |
| Document |
 SCT012W90G3AG Data Sheet
PDF 229.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SCT012H90G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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| 2 | SCT011H75G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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| 3 | SCT014HU65G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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| 4 | SCT015W120G3-4AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
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| 5 | SCT018H65G3AG |
STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET |
|