SCS112AG - Rohm

SCS112AG SiC Schottky Barrier Diodes

SiC Schottky Barrier Diode SCS112AG Applications Switching power supply Dimensions (Unit : mm) Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Revers.

Features

1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible
Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC
Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current (
*1) Forward current surge peak (60Hz 1cyc) (
*2) Junction temperature Storage temperature (
*1)Tc=115°C max (
*2)PW=8.3ms sinusoidal Symbol VRM VR IF IFSM Tj Tstg www.DataSheet.co.kr Limits 600 600 12 41 150 55 to 150 Unit V V A A °C °C
Electrical characteristics (Ta=25°C) Parameter DC blocking voltage Forward .