SiC Schottky Barrier Diode SCS110KE2 . Applications General rectification Dimensions (Unit : mm) Case 15.90 1.98 5.03 Structure Case 5.62 6.17 3.61 3.81 20.95 Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 3.00 2.40 (1) (2) (3) 20.18 Construction Silicon carbide epitaxial planer type .
1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible
4.32
3.00
2.40
(1) (2) (3)
20.18
Construction Silicon carbide epitaxial planer type
1.20 2.03
5.45
0.60
ROHM : TO-247
(Unit : mm)
(1) Anode (2) Cathode (3) Anode
Absolute maximum ratings (Tj=25°C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC)
Symbol VRM VR
Limits 1200 1200
Unit V V
Continuous forward forward current
*6
IF
5 / 10
*1
A
Surge no repetitive forward current
*6
IFSM
24 / 48
*2 97 / 194
*3
A A
Repetitive peak forward current
*6
IFRM 20 / 39
*4
A
Total.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SCS110KG |
ROHM |
SiC Schottky Barrier Diode | |
2 | SCS1100P |
SeCoS |
Schottky Barrier Rectifiers | |
3 | SCS1100V-C |
SeCoS |
Schottky Barrier Rectifiers | |
4 | SCS110AG |
SeCoS |
Schottky Barrier Rectifiers | |
5 | SCS110AM |
ROHM |
SiC Schottky Barrier Diode | |
6 | SCS112AG |
Rohm |
SiC Schottky Barrier Diodes | |
7 | SCS105KG |
ROHM |
SiC Schottky Barrier Diode | |
8 | SCS106AG |
Rohm |
SiC Schottky Barrier Diodes | |
9 | SCS108AG |
Rohm |
SiC Schottky Barrier Diodes | |
10 | SCS1200P-C |
SeCoS |
Schottky Barrier Rectifiers | |
11 | SCS120AG |
Rohm |
SiC Schottky Barrier Diodes | |
12 | SCS120KE2 |
ROHM |
SiC Schottky Barrier Diode |