SCS110KG SiC Schottky Barrier Diode VR 1200V IF 10A QC 34nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline TO-220AC Datasheet (1) lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Ree.
1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline TO-220AC Datasheet (1) lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 - SCS110KG lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SCS110KE2 |
ROHM |
SiC Schottky Barrier Diode | |
2 | SCS1100P |
SeCoS |
Schottky Barrier Rectifiers | |
3 | SCS1100V-C |
SeCoS |
Schottky Barrier Rectifiers | |
4 | SCS110AG |
SeCoS |
Schottky Barrier Rectifiers | |
5 | SCS110AM |
ROHM |
SiC Schottky Barrier Diode | |
6 | SCS112AG |
Rohm |
SiC Schottky Barrier Diodes | |
7 | SCS105KG |
ROHM |
SiC Schottky Barrier Diode | |
8 | SCS106AG |
Rohm |
SiC Schottky Barrier Diodes | |
9 | SCS108AG |
Rohm |
SiC Schottky Barrier Diodes | |
10 | SCS1200P-C |
SeCoS |
Schottky Barrier Rectifiers | |
11 | SCS120AG |
Rohm |
SiC Schottky Barrier Diodes | |
12 | SCS120KE2 |
ROHM |
SiC Schottky Barrier Diode |