SCS120KE2 - ROHM

SCS120KE2 SiC Schottky Barrier Diode

SiC Schottky Barrier Diode SCS120KE2 . Applications General rectification Dimensions (Unit : mm) Case 15.90 1.98 5.03 Structure Case 5.62 6.17 3.61 3.81 20.95 Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 2.40 3.00 (1) (2) (3) 20.18 Construction Silicon carbide epitaxial planer type 1.

Features

1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible 4.32 2.40 3.00 (1) (2) (3) 20.18
Construction Silicon carbide epitaxial planer type 1.20 5.45 2.03 0.60 ROHM : ＴO-247 (Unit : mm) (1) Anode (2) Cathode (3) Anode
Absolute maximum ratings (Tj=25°C) Parameter Symbol Limits Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward forward current
*6 Surge no repetitive forward current
*6 Repetitive peak forward current
*6 Total power disspation
*6 Junction temperature VRM VR IF IFSM IFRM PD Tj 1200 1200 10/ 20
*1 45 / 9.