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S20WB60 Bridge Diodes 600V, 20A Feature Input/Outout In-line Pb free terminal RoHS:Yes OUTLINE Package (House Name): S20WB Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : -=25℃) Item Storage temperrature Junction temperature Repetitive peak reverse voltage Average forward current Average forward current Surge forward current Cur.
5℃) Item Symbol Conditions Forward voltage Reverse current Thermal resistance Thermal resistance Thermal resistance VF IR Rth(j-c) Rth(j-l) Rth(j-a) IF=10A, Pulse measurement, per diode VR=600V, Pulse measurement, per diode Junction to case Junction to lead Junction to ambient ※︓See the original Specifications Ratings MIN TYP MAX 1.05 10 2 2 17 Unit V μA ℃/W ℃/W ℃/W Shindengen Electric Manufacturing Co., Ltd. 2/6 S20WB60_Rev.02(2020.12) CHARACTERISTIC DIAGRAMS Shindengen Electric Manufacturing Co., Ltd. 3/6 S20WB60_Rev.02(2020.12) Shindengen Electric Manufacturing Co., Ltd. 4/6 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S20WB20 |
Shindengen Electric Mfg.Co.Ltd |
Bridge Diode(200V 20A) |
|
| 2 | S20WB80 |
SHINDENGEN |
Bridge Diode |
|
| 3 | S20 |
Microsemi Corporation |
Silicon Power Rectifier |
|
| 4 | S2000 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | S2000 |
INCHANGE |
NPN Transistor |
|
| 6 | S2000 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | S2000A |
Toshiba |
Silicon NPN Transistor |
|
| 8 | S2000A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | S2000AF |
ST Microelectronics |
High voltage NPN Power transistor |
|
| 10 | S2000AF |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | S2000AF1 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | S2000AFI |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|