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·With TO-3P(H)IS package ·High voltage ·Fast switching APPLICATIONS ·Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage.
akdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IE=10mA ;IC=0 IC=4.5A ;IB=2.0A IC=4.5A ;IB=2.0A VCE=1500V; VBE=0 TC=125 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=5V;f=5MHz 8 7 MIN 700 10 www.datasheet4u.com S2000AF SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES IEBO hFE fT TYP. MAX UNIT V V 1.0 1.3 1 2 1 V V mA mA MHz Switching times inductive load ts tf Storage time Fall time 7 0.55 µs µs IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3µH .
S2000AF - ST Microelectronics
The S2000AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S2000A |
Toshiba |
Silicon NPN Transistor |
|
| 2 | S2000A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | S2000AF1 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | S2000AFI |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 5 | S2000 |
Toshiba |
Silicon NPN Transistor |
|
| 6 | S2000 |
INCHANGE |
NPN Transistor |
|
| 7 | S2000 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | S2000N |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | S2000N |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | S2001M |
Loras Industries |
(S2001Mxx) SILICON CONTROLLED RECTIFIER |
|
| 11 | S2001MS2 |
Loras Industries |
(S2001Mxx) SILICON CONTROLLED RECTIFIER |
|
| 12 | S2005 |
Wing Shing Computer Components |
SILICON DIFFUSED POWER TRANSISTOR |
|