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SHINDENGEN Bridge Diode Square In-line Package S20WB20 200V 20A OUTLINE DIMENSIONS Case : S20WB Unit : mm RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Operating Junction Temperature Tj VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load With heatsink Tc=76℃ Average Rectified Forward Current Peak Surge Forward Curren.
tance θja junction to ambient Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S20WBx 100 Forward Voltage Forward Current IF [A] Tc=150 °C [TYP] 10 Tc=25 °C [TYP] Pulse measurement per diode 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S20WBx 80 70 Forward Power Dissipation Forward Power Dissipation PF [W] 60 50 40 30 20 10 0 SIN 0 5 10 15 20 25 30 Average Rectified Forward Current IO [A] Tj= 150 °C Sine wave S20WBx 40 Derating Curve Average Rectified Forward Current IO [A] 35 Heatsink 30 25 20 15 10 5 0 SIN Tc 0 20 40 60 80 100 120 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | S20WB60 |
Shindengen |
Bridge Diodes |
|
| 2 | S20WB80 |
SHINDENGEN |
Bridge Diode |
|
| 3 | S20 |
Microsemi Corporation |
Silicon Power Rectifier |
|
| 4 | S2000 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | S2000 |
INCHANGE |
NPN Transistor |
|
| 6 | S2000 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | S2000A |
Toshiba |
Silicon NPN Transistor |
|
| 8 | S2000A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | S2000AF |
ST Microelectronics |
High voltage NPN Power transistor |
|
| 10 | S2000AF |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | S2000AF1 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | S2000AFI |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|