S2000AFI - STMicroelectronics

S2000AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

The S2000AFI is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. 1 3 2 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltag.

Features

TICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T C = 125 C o Min. Typ . Max. 1 2 100 Un it mA mA µA V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat )∗ V BE(s at)∗ Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage INDUCTIVE LOAD Storage Time Fall T ime Transition F requency I E = 10 mA I C = 4.5 A I C = 4.5 A IB = 2 A IB = 2 A 10 1 1.3 .