Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
RN1607 to RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607, RN1608, RN1609 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super-mini-type with six (6) leads) With built-in bias resistors. Simplified circuit design Reduce a quantity of parts and manufacturing process.
oltage
Collector current Collector power dissipation Junction temperature Storage temperature range
RN1607 RN1608 RN1609
VCBO VCEO
VEBO
IC PC
* Tj Tstg
50
V
50
V
6
7
V
15
100
mA
300
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate rel.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1601 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 2 | RN1602 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1603 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 4 | RN1604 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 5 | RN1605 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 6 | RN1606 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 7 | RN1607 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 8 | RN1609 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 9 | RN1610 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 10 | RN1611 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 11 | RN1632A |
TFT |
(RN1220 / RN1632) Thin Film Chip Resistor |
|
| 12 | RN1632B |
TFT |
(RN1220 / RN1632) Thin Film Chip Resistor |
|