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RN1601 to RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1601, RN1602, RN1603 RN1604, RN1605, RN1606 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in SM6 (super-mini-type with six (6) leads) With built-in bias resistors Simplified circuit desig.
ng
Unit
Collector-base voltage Collector-emitter voltage
Emitter-base voltage
Collector current Collector power dissipation Junction temperature Storage temperature range
RN1601 to 1606 RN1601 to 1604 RN1605, 1606
RN1601 to 1606
VCBO VCEO
VEBO
IC PC
* Tj Tstg
50
V
50
V
10 V
5
100
mA
300
mW
150
°C
−55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tempe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1601 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 2 | RN1602 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1603 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 4 | RN1605 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 5 | RN1606 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 6 | RN1607 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 7 | RN1608 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 8 | RN1609 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 9 | RN1610 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 10 | RN1611 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 11 | RN1632A |
TFT |
(RN1220 / RN1632) Thin Film Chip Resistor |
|
| 12 | RN1632B |
TFT |
(RN1220 / RN1632) Thin Film Chip Resistor |
|