RN1608 |
Part Number | RN1608 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | RN1607 to RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607, RN1608, RN1609 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two device... |
Features |
oltage
Collector current Collector power dissipation Junction temperature Storage temperature range
RN1607 RN1608 RN1609
VCBO VCEO
VEBO
IC PC* Tj Tstg
50
V
50
V
6
7
V
15
100
mA
300
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate rel... |
Document |
RN1608 Data Sheet
PDF 432.95KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN1601 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
2 | RN1602 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
3 | RN1603 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
4 | RN1604 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
5 | RN1605 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |