RN1607 to RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607, RN1608, RN1609 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super-mini-type with six (6) leads) With built-in bias resistors. Simplified circuit design Reduce a quantity of parts and manufacturing process.
oltage
Collector current Collector power dissipation Junction temperature Storage temperature range
RN1607 RN1608 RN1609
VCBO VCEO
VEBO
IC PC
* Tj Tstg
50
V
50
V
6
7
V
15
100
mA
300
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate rel.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN1601 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
2 | RN1602 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
3 | RN1603 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
4 | RN1604 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
5 | RN1605 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
6 | RN1606 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
7 | RN1607 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
8 | RN1608 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
9 | RN1610 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
10 | RN1611 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
11 | RN1632A |
TFT |
(RN1220 / RN1632) Thin Film Chip Resistor | |
12 | RN1632B |
TFT |
(RN1220 / RN1632) Thin Film Chip Resistor |