www.DataSheet4U.com RJK6015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item.
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch .
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Stat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6015DPM |
Renesas |
MOS FET | |
2 | RJK6011DJA |
Renesas |
High Speed Power Switching MOS FET | |
3 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET | |
4 | RJK6012DPE |
Renesas |
N-Channel Power MOSFET | |
5 | RJK6012DPP |
Renesas |
N-Channel Power MOSFET | |
6 | RJK6012DPP-A0 |
Renesas |
High Speed Power Switching MOSFET | |
7 | RJK6013DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
8 | RJK6013DPP |
Renesas |
N-Channel Power MOSFET | |
9 | RJK6013DPP-E0 |
Renesas |
N-Channel Power MOSFET | |
10 | RJK6014DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
11 | RJK6014DPK |
INCHANGE |
N-Channel MOSFET | |
12 | RJK6014DPP |
Renesas Technology |
Silicon N-Channel MOSFET |