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Low on-resistance RDS(on) = 0.315 typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching
R07DS0438EJ0200 (Previous: REJ03G1752-0100) Rev.2.00 Jun 21, 2012
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
D
G
1. Gate 2. Drain 3. Source
S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK6015DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
2 | RJK6015DPK |
INCHANGE |
N-Channel MOSFET | |
3 | RJK6011DJA |
Renesas |
High Speed Power Switching MOS FET | |
4 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET | |
5 | RJK6012DPE |
Renesas |
N-Channel Power MOSFET | |
6 | RJK6012DPP |
Renesas |
N-Channel Power MOSFET | |
7 | RJK6012DPP-A0 |
Renesas |
High Speed Power Switching MOSFET | |
8 | RJK6013DPE |
Renesas Technology |
Silicon N-Channel MOSFET | |
9 | RJK6013DPP |
Renesas |
N-Channel Power MOSFET | |
10 | RJK6013DPP-E0 |
Renesas |
N-Channel Power MOSFET | |
11 | RJK6014DPK |
Renesas Technology |
Silicon N-Channel MOSFET | |
12 | RJK6014DPK |
INCHANGE |
N-Channel MOSFET |