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RJK6015DPK |
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| Part Number | RJK6015DPK |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) ·Fast Switching ·Minimum Lo... |
| Features |
·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS · Low on-resistance · Low leakage current · High speed switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 21 A IDM Drain Current-Single Plused 63 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junct... |
| Document |
 RJK6015DPK Data Sheet
PDF 229.03KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RJK6015DPK |
Renesas Technology |
Silicon N-Channel MOSFET |
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| 2 | RJK6015DPM |
Renesas |
MOS FET |
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| 3 | RJK6011DJA |
Renesas |
High Speed Power Switching MOS FET |
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| 4 | RJK6011DJE |
Renesas |
N-Channel Power MOSFET |
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| 5 | RJK6012DPE |
Renesas |
N-Channel Power MOSFET |
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