Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free • • • • • Outline RENESAS Package code: P.
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V)
• Pb-free
• Halogen-free
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•
•
•
•
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 6 7 8 D D D D
5 4
4 G
3 12
1, 2, 3 4 5
Source Gate Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Stor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK03C0DPA |
Renesas |
Silicon N Channel Power MOS FET | |
2 | RJK03C2DPB |
Renesas |
Silicon N-Channel MOSFET | |
3 | RJK03C5DPA |
Renesas |
Built in SBD N Channel Power MOS FET | |
4 | RJK0301DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
5 | RJK0302DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
6 | RJK0303DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
7 | RJK0304DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
8 | RJK0305DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
9 | RJK0316DSP |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
10 | RJK0323JPD |
Renesas |
Silicon N-Channel MOS FET | |
11 | RJK0328DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
12 | RJK0328DPB-01 |
Renesas |
Silicon N-Channel MOS FET |