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RJK03C1DPB |
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| Part Number | RJK03C1DPB |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features High speed switching Capable of 4.5 V gate drive Low... |
| Features |
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free • • • • • Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 6 7 8 D D D D 5 4 4 G 3 12 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Stor... |
| Document |
 RJK03C1DPB Data Sheet
PDF 283.84KB |
| Distributor | Stock | Price | Buy |
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