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High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS0940EJ0400 Rev.4.00 Mar 22, 2013
Outline
RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F))
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK03C0DPA |
Renesas |
Silicon N Channel Power MOS FET | |
2 | RJK03C1DPB |
Renesas |
Silicon N Channel Power MOS FET | |
3 | RJK03C2DPB |
Renesas |
Silicon N-Channel MOSFET | |
4 | RJK0301DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
5 | RJK0302DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
6 | RJK0303DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
7 | RJK0304DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
8 | RJK0305DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
9 | RJK0316DSP |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
10 | RJK0323JPD |
Renesas |
Silicon N-Channel MOS FET | |
11 | RJK0328DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
12 | RJK0328DPB-01 |
Renesas |
Silicon N-Channel MOS FET |