RJK0323JPD - Renesas

RJK0323JPD Silicon N-Channel MOS FET

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Features

• For Automotive application
• AEC-Q101 compliant
• Low on-resistance : RDS(on) = 7.0 mΩ typ.
• Low drive current
• Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 123 1G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note1 IDR I Note2 AP E .