RJK0332DPB - Renesas Technology

RJK0332DPB Silicon N Channel Power MOS FET Power Switching

www.DataSheet4U.com RJK0332DPB Silicon N Channel Power MOS FET Power Switching REJ03G1641-0400 Rev.4.00 Apr 10, 2008 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5.

Features

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS = 10 V)
• Pb-free
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• Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10.