of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.1 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
4 G
Preliminary Datasheet
R07DS0266EJ0500 (Previous: REJ03G1639-0400)
Rev.5.00 Mar 01, 2011
5 D
SSS 123
1, 2, 3 Source 4 Gate 5 Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Cha.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RJK0330DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
2 | RJK0331DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
3 | RJK0332DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
4 | RJK0332DPB-01 |
Renesas |
Silicon N-Channel MOS FET | |
5 | RJK0301DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
6 | RJK0302DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
7 | RJK0303DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
8 | RJK0304DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
9 | RJK0305DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
10 | RJK0316DSP |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching | |
11 | RJK0323JPD |
Renesas |
Silicon N-Channel MOS FET | |
12 | RJK0328DPB |
Renesas Technology |
Silicon N Channel Power MOS FET Power Switching |