RJK0332DPB-01 - Renesas

RJK0332DPB-01 Silicon N-Channel MOS FET

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Features

 High speed switching
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
 Low on-resistance RDS(on) = 3.6 m typ. (at VGS = 10 V)
 Pb-free
 Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS0268EJ0500 (Previous: REJ03G1641-0400) Rev.5.00 Mar 01, 2011 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Cha.