RB531S-30 - Rohm

RB531S-30 Schottky Barrier Diode

Data Sheet Schottky Barrier Diode RB531S-30 Applications Dimensions(Unit : mm) Land size figure(Unit : mm) General rectification Features 1)Ultra small mold type.(EMD2) 2)Low VF 3)High reliability Construction Silicon epitaxial planer 0.8±0.05 N 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 1.2±0.05 1.6±0.1 0.6 1.7 0.

Features

1)Ultra small mold type.(EMD2) 2)Low VF 3)High reliability
Construction Silicon epitaxial planer 0.8±0.05 N 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 1.2±0.05 1.6±0.1 0.6 1.7 0.12±0.05 0.8 uy EMD2 B 
Structure 0.6±0.1 e
Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 t Tim 00.9.905±±0.005.06 0 Empty pocket 4.0±0.1 2.2.4405±±0.0.015 11..235±0..0066 0 s
Absolute maximum ratings(Ta=25C) Parameter Symbol Reverse voltage(DC) VR a Average rectified forward current Io Forward current surge peak(60Hz/1cyc) IFSM Juncti.