RB530S-30FH - ROHM

RB530S-30FH Schottky barrier diode

Data Sheet Schottky barrier Diode AEC-Q101 Qualified RB530S-30FH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability Construction Silicon epitaxial planer 0. 6 1.7 0.8 y EMD2 Bu Structure e Taping specifications (Unit : mm) 4.0±0.1 2.0±.

Features

1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability
Construction Silicon epitaxial planer 0. 6 1.7 0.8 y EMD2 Bu
Structure e
Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.05 φ1.55±0.05 Tim 00.9.905±±0.005.06 0 Empty pocket 4.0±0.1 2.0±0.05 2.2.4405±±0.0.015 11..235±0.0066 0 st
Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Reverse voltage (DC) VR a Average rectified forward current Io 30 V 100 mA Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj LStorage temperature Tstg 500 mA 125 C -40 to +125 .