RB530S-30 - Rohm

RB530S-30 Schottky Barrier Diode

www.DataSheet4U.com Schottky barrier Diode RB530S-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability 0.6 EMD2 Construction Silicon epitaxial planer Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter.

Features

1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability 0.6 EMD2
Construction Silicon epitaxial planer
Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (DC) VR Average rectified forward current Io Forward current surge peak (60Hz/1cyc) IFSM Junction temperature Tj Storage temperature Tstg
Electical characteristics (Ta=25C) Parameter Forward voltage Reverse current Limits 30 100 500 125 -40 to +125 Unit V mA mA C C Symbol VF IR Min. - Typ. - Max. 0.45 0.5 Unit V μA Conditions IF=10mA VR=10V www.rohm.com ©2010.