RB530VM-30 - Rohm

RB530VM-30 Schottky Barrier Diode

Schottky Barrier Diode RB530VM-30 Applications General rectification Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Datasheet Land size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 Features 1)Ultra small mold type. (UMD2) 2)High reliability Construction Silicon epitaxial planer 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEDEC : SOD-323 .

Features

1)Ultra small mold type. (UMD2) 2)High reliability
Construction Silicon epitaxial planer 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) UMD2
Structure
Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1
Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz1cyc) Junction temperature IFSM Tj Storage temperature Tstg 1.40±0.1 4.0±0.1 φ1.05 Limits 30 3.