RB162VA-20 - Rohm

RB162VA-20 Schottky Barrier Diode

www.DataSheet4U.com Schottky barrier Diode RB162VA-20 Applications General rectification Dimensions (Unit : mm) 0.17 −0.05 +0.1 Land size figure (Unit : mm) 1.1 3)High reliability TUMD2 Structure Silicon epitaxial planer Structure 0.6 +0.2 −0.1 Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage.

Features

E CURRENT : IR(A) 10000 100000 　 1000 Ta=125 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) www.DataSheet4U.com Data Sheet f=1MHz 100 1000 Ta=75 C 100 Ta=25 C 0.01 Ta=25 C Ta=-25 C 10 10 Ta=-25 C 1 0.001 0.0 1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 0.1 0.2 0.3 0.4 0.5 0 10 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 20 FORWARD VOLTAGE : V F(V) VF-IF CHARACTERISTICS 400 Ta=25 C VF=1.0A n=30pcs 450 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25 C VR=20V n=30pcs 180 178 176 174 172 170 168 166 164 162 160 Ct DISPERSION MAP AVE:172pF Ta=25 C f=1MH.