Data Sheet Schottky Barrier Diode AEC-Q101 Qualified RB162M-40TF Applications General rectification Features Dimensions(Unit : mm) 0.85 3.05 for Land size figure(Unit : mm) 1.2 1)Small power mold type.(PMDU) 2)Low IR 3)High reliability ed Construction Silicon epitaxial planer PMDU Structure mendigns Taping specifications(Unit : mm) 4.0±0.1.
Dimensions(Unit : mm)
0.85 3.05
for
Land size figure(Unit : mm) 1.2
1)Small power mold type.(PMDU) 2)Low IR 3)High reliability
ed
Construction
Silicon epitaxial planer
PMDU
Structure
mendigns
Taping specifications(Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.25±0.05
ecom Des 1.81±0.1
4.0±0.1
φ1.0±0.1
R ew
Absolute maximum ratings(Ta=25C)
t N Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
40
V
o Reverse voltage (DC)
VR
40
V
Average rectified forward current (
*1)
Io
1
A
NForward current surge peak (60Hz / 1cyc)
IFSM
30
A
3.5±0.05
1.75±0.1
8..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RB162M-40 |
Rohm |
Schottky Barrier Diode | |
2 | RB162M-30 |
ROHM |
Schottky Barrier Diode | |
3 | RB162M-60 |
Rohm |
Schottky Barrier Diode | |
4 | RB162M-60TF |
ROHM |
Schottky barrier diode | |
5 | RB162MM-30 |
Rohm |
Schottky Barrier Diode | |
6 | RB162MM-40 |
Rohm |
Schottky Barrier Diode | |
7 | RB162MM-60 |
Rohm |
Schottky Barrier Diode | |
8 | RB162L-40 |
Rohm |
Schottky Barrier Diode | |
9 | RB162L-60 |
Rohm |
Schottky Barrier Diode | |
10 | RB162VA-20 |
Rohm |
Schottky Barrier Diode | |
11 | RB162VAM-20 |
ROHM |
Schottky Barrier Diode | |
12 | RB160A30 |
Rohm |
Schottky barrier diode |