RB162M-60 - Rohm

RB162M-60 Schottky Barrier Diode

Schottky Barrier Diode RB162M-60 Data Sheet lApplication General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 1.2 2.6±0.1r 3.53.±50.±102.2 0.85 lFeatures 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability lConstruction Silicon epitaxial planar ① PMDU 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Man.

Features

1) Small power mold type.(PMDU) 2) Low IR 3) High reliability lConstruction Silicon epitaxial planar ① PMDU 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 lStructure lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 3.05 0.25±0.05 1.75±0.1nsded fo 8.0±0.2 33..7711±0±.00.81 3.5±0.05NotNeRewcDoemsimgen 1.81±0.1 4.0±0.1 φ 1.0±0.1 1.5MAX lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (
*1) VRM VR Io Forward current surge peak (60Hz1cyc) IFSM Junction tempera.