RB162M-60TF - ROHM

RB162M-60TF Schottky barrier diode

Schottky Barrier Diode RB162M-60TF lApplication General rectification lDimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Datasheet AEC-Q101 Qualified lLand size figure (Unit : mm) 1.2 2.6±0.1 3.5±0.2 0.85 3.05 lFeatures 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability ① for PMDU d lConstruction de Silicon epitaxial planar 0.9±0.1 ROHM :.

Features

1) Small power mold type.(PMDU) 2) Low IR 3) High reliability ① for PMDU d lConstruction de Silicon epitaxial planar 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 lStructure lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 mmeensigns 1.81±0.1 4.0±0.1 φ 1.0±0.1 3.5±0.05 1.75±0.1 o D lAbsolute maximum ratings (Ta = 25°C) c Parameter Symbol Limits Unit e w Reverse voltage (repetitive) R e Reverse voltage (DC) VRM 60 V VR 60 V Average rectified forward current (
*1) Io 1 A t N Forward current surge peak (60Hz1cyc) IFSM 20 A o Junction t.